STP25NM60N Datasheet

STP25NM60N

Datasheet specifications

Datasheet's name STP25NM60N
File size 283.204 KB
File type pdf
Number of pages 12

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Other documentations

STx25NM60N(-1) 18 pages

Technical specifications

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ II
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
  • Base Part Number: STP25N
  • detail: N-Channel 600V 21A (Tc) 160W (Tc) Through Hole TO-220AB

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